Using modern materials, long-lived Venusian landers and rovers are now becoming more feasible than in the Space Age.

But while the hulls and mechanics of such vehicles present straightforward challenges, designing electronics that can survive Venusian conditions is another matter.

Silicon-based electronics would not cope with Venusian temperatures for more than a few hours, but silicon carbide offers much more promise.

This IEEE article from two years ago explores the challenge:

…..NASA Glenn Research Center recently reported silicon carbide ICs, with nearly 200 transistors per chip, that operated for a full 60 days in that center’s Venus environment chamber. The chamber subjected the transistors to 9.3 megapascals of pressure, 460 °C heat, and the planet’s particular caustic atmosphere. Not one of those transistors succumbed, suggesting they could have soldiered on much longer had more time in the chamber been available.

THE RADIO WE COULD SEND TO HELL

Sites for landers will need to be chosen carefully to avoid being buried in rubble.

This huge landslide occurred during the Magellan mission in the 1990s, affecting an area about 15 by 30km.

>The image on the left was taken in late November of 1990 during Magellan first trip around Venus. The image on the right was taken July 23, as the Magellan spacecraft passed over the region for the second time.

I was just thinking about this.

Bubblecar said:

Using modern materials, long-lived Venusian landers and rovers are now becoming more feasible than in the Space Age.

But while the hulls and mechanics of such vehicles present straightforward challenges, designing electronics that can survive Venusian conditions is another matter.

Silicon-based electronics would not cope with Venusian temperatures for more than a few hours, but silicon carbide offers much more promise.

This IEEE article from two years ago explores the challenge:

…..NASA Glenn Research Center recently reported silicon carbide ICs, with nearly 200 transistors per chip, that operated for a full 60 days in that center’s Venus environment chamber. The chamber subjected the transistors to 9.3 megapascals of pressure, 460 °C heat, and the planet’s particular caustic atmosphere. Not one of those transistors succumbed, suggesting they could have soldiered on much longer had more time in the chamber been available.

THE RADIO WE COULD SEND TO HELL

> NASA Glenn Research Center recently reported silicon carbide ICs, with nearly 200 transistors per chip, that operated for a full 60 days in that center’s Venus environment chamber. The chamber subjected the transistors to 9.3 megapascals of pressure, 460 °C heat, and the planet’s particular caustic atmosphere. Not one of those transistors succumbed.

Nice. Very nice.

My main concern for landing on Venus is the batteries. The higher the ambient temperature, the less efficient the battery operation is. I’m sure it can be handled, but I don’t know how.

One option is to avoid batteries entirely and run directly off RTGs. With the new electronics, just about every piece of the necessary technology is now in existence.

mollwollfumble said:

Bubblecar said:

Using modern materials, long-lived Venusian landers and rovers are now becoming more feasible than in the Space Age.

But while the hulls and mechanics of such vehicles present straightforward challenges, designing electronics that can survive Venusian conditions is another matter.

Silicon-based electronics would not cope with Venusian temperatures for more than a few hours, but silicon carbide offers much more promise.

This IEEE article from two years ago explores the challenge:

…..NASA Glenn Research Center recently reported silicon carbide ICs, with nearly 200 transistors per chip, that operated for a full 60 days in that center’s Venus environment chamber. The chamber subjected the transistors to 9.3 megapascals of pressure, 460 °C heat, and the planet’s particular caustic atmosphere. Not one of those transistors succumbed, suggesting they could have soldiered on much longer had more time in the chamber been available.

THE RADIO WE COULD SEND TO HELL

> NASA Glenn Research Center recently reported silicon carbide ICs, with nearly 200 transistors per chip, that operated for a full 60 days in that center’s Venus environment chamber. The chamber subjected the transistors to 9.3 megapascals of pressure, 460 °C heat, and the planet’s particular caustic atmosphere. Not one of those transistors succumbed.

Nice. Very nice.

My main concern for landing on Venus is the batteries. The higher the ambient temperature, the less efficient the battery operation is. I’m sure it can be handled, but I don’t know how.

One option is to avoid batteries entirely and run directly off RTGs. With the new electronics, just about every piece of the necessary technology is now in existence.

We will definitely learn more about all of that, when we test it there.